Tunneling conductance of metaloxide junctions

Vladimir M. Svistunov; A. I. Khachaturov; M. A. Belogolovskii

doi:10.1117/12.241800

10 June 1996 Tunneling conductance of metaloxide junctions

Vladimir M. Svistunov, A. I. Khachaturov, M. A. Belogolovskii

Proceedings Volume 2696, Spectroscopic Studies of Superconductors; (1996) https://doi.org/10.1117/12.241800
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

The differential conductance behavior of metal/insulator/metaloxide and metaloxide/insulator/metaloxide tunnel structures has been studied. It is found that because of small Fermi energies of metaloxides a number of universally accepted principles of tunneling spectroscopy of conventional materials cease to be valid. First, the shape of tunneling characteristics of a metaloxide is unusually sensitive to barrier parameters: the thickness of the insulating layer and the barrier height. If the barrier height is quite large or the thickness is small the dependence of tunnel conductance on voltage for a metaloxide/insulator/metaloxide structure manifests a zero-bias 'peak resistance' anomaly. On further increasing the height or decreasing the thickness the dependence of conductance (sigma) versus voltage V decreases throughout the entire range of voltages. Second, the parabola-like dependence of (sigma) (V) for a metal/insulator/metaloxide structure calculated for a symmetrical rectangular potential barrier appears not to be symmetrical. Its minimum occurs at a finite voltage. Finally, in contrast to metal/oxide/metal contacts the metaloxide tunnel characteristics calculated in the WKB-approximation differ considerably from the corresponding ones obtained in the 'sharp boundaries' model.

Citation Download Citation

Vladimir M. Svistunov, A. I. Khachaturov, and M. A. Belogolovskii "Tunneling conductance of metaloxide junctions", Proc. SPIE 2696, Spectroscopic Studies of Superconductors, (10 June 1996); https://doi.org/10.1117/12.241800

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