193-nm lithography (Review Paper)

Mordechai Rothschild; Anthony R. Forte; Mark W. Horn; Roderick R. Kunz; Susan C. Palmateer; Jan H. C. Sedlacek

doi:10.1117/12.237751

8 April 1996 193-nm lithography (Review Paper)

Mordechai Rothschild, Anthony R. Forte, Mark W. Horn, Roderick R. Kunz, Susan C. Palmateer, Jan H. C. Sedlacek

Proceedings Volume 2703, Lasers as Tools for Manufacturing of Durable Goods and Microelectronics; (1996) https://doi.org/10.1117/12.237751
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

The trend in microelectronics toward printing features 0.25 micrometers and below has motivated the development of lithography at the 193-nm wavelength of argon fluoride excimer lasers. This technology is in its early stages, but a picture is emerging of its strengths and limitations. The change in wavelength from 248 to 193 nm will require parallel progress in projection systems, optical materials, and photoresist chemistries and processes. This paper reviews the current status of these various topics, as they have been engineered under a multi-year program at MIT Lincoln Laboratory.

Citation Download Citation

Mordechai Rothschild, Anthony R. Forte, Mark W. Horn, Roderick R. Kunz, Susan C. Palmateer, and Jan H. C. Sedlacek "193-nm lithography (Review Paper)", Proc. SPIE 2703, Lasers as Tools for Manufacturing of Durable Goods and Microelectronics, (8 April 1996); https://doi.org/10.1117/12.237751

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