Paper
8 April 1996 Maskless fabrication of submicrometer nonharmonic relief gratings for single-frequency DFB semiconductor lasers by three-beam holographic method
Alexander I. Khudobenko, Vladislav Ya. Panchenko, Vladimir N. Seminogov
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Abstract
Three-beam maskless holographic method for fabricating submicron nonharmonic relief structures with phase shift (pi) , which are capable of providing stable single-frequency oscillation at Bragg wavelength in semiconductor DFB lasers, is developed. To demonstrate the effectivity of this method the biharmonic structure with period d approximately equals 0.5 micrometers and quasisinusoidally modulated amplitude, possessing the phase shift (pi) , is fabricated on n-InP surface in the process of liquid-phase laser photoelectrochemical etching.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander I. Khudobenko, Vladislav Ya. Panchenko, and Vladimir N. Seminogov "Maskless fabrication of submicrometer nonharmonic relief gratings for single-frequency DFB semiconductor lasers by three-beam holographic method", Proc. SPIE 2703, Lasers as Tools for Manufacturing of Durable Goods and Microelectronics, (8 April 1996); https://doi.org/10.1117/12.237764
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KEYWORDS
Semiconductor lasers

Phase shifts

Holography

Modulation

Etching

Laser development

Semiconductors

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