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27 May 1996 Contamination control in semiconductor manufacturing and particle deposition on wafer surfaces
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Particulate conthmin4tion is an important problem in semiconductor device inanufactuiing. Very large scale integrated circuit (VLSi) devices such as the current generation of 16 megabit DRAM (dynamic random access memory) have typical device feature sizes on the order ofO.5 pm. Particles as small as 0.05 tm can cause a killer defect to form and the loss of product yield. Contaminant particles can deposit on the wafer surface from the gas or liquid in which they are suspended by the process of diffusion, sedimentation, and electrostatic attraction. In the case of deposition of gas-borne particles (aerosols), additional effects due of thermophoresis or diflutsiophoresis can occur. This paper discusses the fundamental issues in contamination control in semiconductor manufacturing and the mechanisms of particle depositions on wafer surfaces taking into account the different deposition mechanisms. Results of the theoretical calculation sill be compared th the available experimental data.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Benjamin Y.H. Liu "Contamination control in semiconductor manufacturing and particle deposition on wafer surfaces", Proc. SPIE 2714, 27th Annual Boulder Damage Symposium: Laser-Induced Damage in Optical Materials: 1995, (27 May 1996);

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