Packaging-induced failure of semiconductor lasers and optical telecommunications components

Julia A. Sharps

doi:10.1117/12.240398

27 May 1996 Packaging-induced failure of semiconductor lasers and optical telecommunications components

Julia A. Sharps

Author Affiliations +

Proceedings Volume 2714, 27th Annual Boulder Damage Symposium: Laser-Induced Damage in Optical Materials: 1995; (1996) https://doi.org/10.1117/12.240398
Event: Laser-Induced Damage in Optical Materials: 1995, 1995, Boulder, CO, United States

Abstract

Telecommunications equipment for field deployment generally have specified lifetimes of <100,000 hr. To achieve this high reliability, it is common practice to package sensitive components in hermetic, inert gas environments. The intent is to protect components from particulate and organic contamination, oxidation, and moisture. However, for high power density 980 nm diode lasers used in optical amplifiers, we found that hermetic, inert gas packaging induced a failure mode not observed in similar, unpackaged lasers. We refer to this failure mode as packaging-induced failure, or PIF. PIF is caused by nanomole amounts of organic contamination which interact with high intensity 980 nm light to form solid deposits over the emitting regions of the lasers. These deposits absorb 980 nm light, causing heating of the laser, narrowing of the band gap, and eventual thermal runaway. We have found PIF is averted by packaging with free °2 and/or a getter material the sequesters organics.

Citation Download Citation

Julia A. Sharps "Packaging-induced failure of semiconductor lasers and optical telecommunications components", Proc. SPIE 2714, 27th Annual Boulder Damage Symposium: Laser-Induced Damage in Optical Materials: 1995, (27 May 1996); https://doi.org/10.1117/12.240398

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