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27 May 1996 Development of two new positive DUV photoresists for use with direct-write e-beam lithography
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Two new positive tone, chemically amplified, DUV resists from Shipley, XP-9525 and XP- 9549Q (UV III) have been investigated for use as direct write e-beam resists. Both of these materials have shown extremely high resolution capabilities while maintaining excellent sensitivity to e-beam exposure. Sub-0.20 micrometers line and space gratings were resolved in UV III, and 0.10 micrometers gratings were resolved in XP-9525. A formal design of experiment was created and used as a framework to develop a process for UV III which would optimize several resultant responses including: exposure latitude, edge roughness, and sensitivity. This paper will discuss the process development of these resists, and detail their performance characteristics. Effects relating to post-exposure bake delay will also be considered due to the susceptibility of many chemically amplified resists to airborne contaminants. UV III exhibited much greater stability than XP-9525, and was able to maintain precise linewidth control after 4 hours of delay, making it acceptable for use in a normal process environment. In contrast, XP-9525 exhibited severe T-topping after post-exposure bake delays of only 15 minutes, a condition which can only be solved using additional processing steps and/or environmental controls.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David P. Mancini, Douglas J. Resnick, Kevin J. Nordquist, William J. Dauksher, James W. Thackeray, and Mark A. McCord "Development of two new positive DUV photoresists for use with direct-write e-beam lithography", Proc. SPIE 2723, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI, (27 May 1996);

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