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27 May 1996 Mark topography for alignment and registration in projection electron lithography
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We have studied two mark geometries for possible use in a projection e-beam lithography system using SCALPEL (scattering with angular limitation in projection electron lithography). These are V-grooves and vertically etched geometries, pedestals or trenches. We report results of measurements of backscattered electron (BSE) contrast form topographic marks of varying size and as a function of energy up to 100 kV. The marks were fabricated on silicon wafers. The measurements were taken both in a scanning electron microscope and in an experimental SCALPEL machine operating in focused probe mode. The V-grooves ranged from 1.0 to 30 micrometers wide. The vertical etched features ranged from 2 to 30 micrometers wide and 0.6 and 50 micrometers depth. The results depended not only on the feature width and depth, but also on whether the features were isolated or in line and space patterns. Using a BSE ratio of 1.05 as a criterion for acceptable contrast from an alignment mark, V-grooves and vertical etched features had acceptable contrast with exception of the smallest and shallowest features for both geometries.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Reginald C. Farrow, Masis M. Mkrtchyan, Kevin Bolen, Myrtle I. Blakey, Christopher J. Biddick, Linus A. Fetter, Harold A. Huggins, Regine G. Tarascon-Auriol, and Steven D. Berger "Mark topography for alignment and registration in projection electron lithography", Proc. SPIE 2723, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI, (27 May 1996);


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