Silicon oxide deposition using a gallium-focused ion beam

Haruki Komano; Hiroko Nakamura; Mitsuyo Kariya; Munehiro Ogasawara

doi:10.1117/12.240495

27 May 1996 Silicon oxide deposition using a gallium-focused ion beam

Haruki Komano, Hiroko Nakamura, Mitsuyo Kariya, Munehiro Ogasawara

Proceedings Volume 2723, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI; (1996) https://doi.org/10.1117/12.240495
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

Experiments concerning silicon oxide deposition using a focused ion beam were carried out in order to apply silicon oxide as insulator in integrated circuit modification. Silicon oxide film was formed using a 25-keV gallium focused ion beam with a mixed gas of 1.3.5.7- tetramethylcyclotetrasiloxane and oxygen. The deposited film consisted of mainly silicon and oxygen, which was analyzed by micro-Auger electron spectroscopy. It also contained 5 percent gallium, but carbon content was below noise level. The ratio of silicon to oxygen was 1 to 2. It was found that carbon content depended on oxygen used as deposition source gas. The resistivities of the eight deposited silicon oxide films were measured. The resistivities wer 28-79 M(Omega) cm at 5 volts and these values did not change significantly even after the samples were left in a room for three months. It was determined that it will be possible to use deposited silicon oxide for integrated circuit modification.

Citation Download Citation

Haruki Komano, Hiroko Nakamura, Mitsuyo Kariya, and Munehiro Ogasawara "Silicon oxide deposition using a gallium-focused ion beam", Proc. SPIE 2723, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI, (27 May 1996); https://doi.org/10.1117/12.240495

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