Paper
14 June 1996 Application of photodecomposable base concept to two-component deep-UV chemically amplified resists
Satoru Funato, N. Kawasaki, Yoshiaki Kinoshita, Seiya Masuda, Hiroshi Okazaki, Munirathna Padmanaban, T. Yamamoto, Georg Pawlowski
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Abstract
The use of photodecomposable bases (PDB) offers distinct benefits to the general lithographic performance, and in particular, to the stability of the latent image in positive tone chemically amplified deep UV resists (CAR). The PDB concept utilizes radiation sensitive basic compounds, such as triphenylsulfonium hydroxide (TPSOH), which are coformulated as additives to the resist formulation. In the exposed resist sectors the PDB is decomposed into neutral fragments, which do not interfere with the simultaneously produced acid from the photolyzed photoacid generator (PAG). In the unexposed regions the PDB remains active and effectively neutralizes acid molecules diffusing into these areas. The successful integration of the PDB concept into acetal-based three component systems has been described previously. Its usefulness for standard two component materials, consisting of a polymer partly reacted with acid-labile protective groups, such s t-BOC or acteal/ketal protected ploy-4-hydroxystyrene (PHS), and a PAG is investigated in this paper. The effects of the PDB on the latent image stability, and additional resist properties, such as transparency, sensitivity, contrast, standing waves, etc. are discussed in detail. Finally, a new high performance deep UV CAR material incorporating the PDB concept is presented.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Satoru Funato, N. Kawasaki, Yoshiaki Kinoshita, Seiya Masuda, Hiroshi Okazaki, Munirathna Padmanaban, T. Yamamoto, and Georg Pawlowski "Application of photodecomposable base concept to two-component deep-UV chemically amplified resists", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); https://doi.org/10.1117/12.241816
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Cited by 9 scholarly publications.
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KEYWORDS
Deep ultraviolet

Polymers

Lithography

Chemically amplified resists

Photoresist processing

Silicon

Reflectivity

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