Design and properties of new deep-UV positive photoresist

Sang-Jun Choi; Si-Young Jung; Chang-Hwan Kim; Choon-Geun Park; Woo-Sung Han; Young-Bum Koh; Moon-Yong Lee

doi:10.1117/12.241831

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14 June 1996 Design and properties of new deep-UV positive photoresist

Sang-Jun Choi, Si-Young Jung, Chang-Hwan Kim, Choon-Geun Park, Woo-Sung Han, Young-Bum Koh, Moon-Yong Lee

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Proceedings Volume 2724, Advances in Resist Technology and Processing XIII; (1996) https://doi.org/10.1117/12.241831
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

A new class of photodefinable polymer based on di-tert-butyl malonate protecting group was developed. A novel alkyl malonated copolymer was synthesized by copolymerization of di- tert-butyl malonylmethyl styrene (DBMST) with 4-acetoxystyrene (AST), and the subsequent deprotection of acetoxy group. Exposure of the material to deep-UV light followed by postbaking results in significant changes in solubility and polarity due to the formation of carboxylic functions which were produced on the polymer chain through the photogenerated acid catalyst (chemical amplification). This resist resolved 0.24 micrometer line-and-space patterns, formulated from di-tert-butyl malonate-protected polyhydroxystyrene (PHS) and triphenylsulfonium (TPS) triflate, with the aqueous base development using a KrF excimer laser stepper (NA 0.45) with a dose of 44 mJ/cm².

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Sang-Jun Choi, Si-Young Jung, Chang-Hwan Kim, Choon-Geun Park, Woo-Sung Han, Young-Bum Koh, and Moon-Yong Lee "Design and properties of new deep-UV positive photoresist", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); https://doi.org/10.1117/12.241831

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