Enhanced i-line lithography using AZ BARLi coating

T.-S. Yang; Taeho H. Kook; W. A. Josephson; Mark A. Spak; Ralph R. Dammel

doi:10.1117/12.241871

14 June 1996 Enhanced i-line lithography using AZ BARLi coating

T.-S. Yang, Taeho H. Kook, W. A. Josephson, Mark A. Spak, Ralph R. Dammel

Proceedings Volume 2724, Advances in Resist Technology and Processing XIII; (1996) https://doi.org/10.1117/12.241871
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

A combined wet/dry develop process using AZ^R 7800 resist is described which achieves final resolution of 0.25 micrometer lines and spaces after transfer into the semiconductor substrate. The process utilizes AZ^R BARLi^TM bottom coating both as an antireflective and as an etch enhancement layer. Features which are not resolved after the wet development step can be transferred linearly in the dry development step, which allows the introduction and removal of lithographic bias in a feature-size independent way. The resist process used employs very short bake times at high temperatures to achieve improved resist densification, which leads to substantial gains in thermal stability.

Citation Download Citation

T.-S. Yang, Taeho H. Kook, W. A. Josephson, Mark A. Spak, and Ralph R. Dammel "Enhanced i-line lithography using AZ BARLi coating", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); https://doi.org/10.1117/12.241871

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