Paper
14 June 1996 Novel alkaline-soluble alicyclic polymer poly(TCDMACOOH) for ArF chemically amplified positive resists
Katsumi Maeda, Kaichiro Nakano, Takeshi Ohfuji, Etsuo Hasegawa
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Abstract
We have developed a novel ArF resist polymer poly[carboxy- tricyclo(5.3.2.0)decanylmethyl methacrylate] [poly(TCDMACOOH)], which has a carboxyl substituent on the tricyclodecanyl group. This polymer exhibited good solubility (1.93 micrometer/sec) in a 2.38% TMAH solution, high transparency (70%/micrometer) at 193 nm, and a good dry-etching resistance for CF4 gas (1.2 times the etching rate of novolac resin). Furthermore, the resist composed of the partially protected copolymer poly(TCDMACOOH60-TCDMACOOtBu40) with a photoacid generator exhibits a resolution of 0.18 micrometer L/S using an ArF exposure system (NA equals 0.55).
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Katsumi Maeda, Kaichiro Nakano, Takeshi Ohfuji, and Etsuo Hasegawa "Novel alkaline-soluble alicyclic polymer poly(TCDMACOOH) for ArF chemically amplified positive resists", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); https://doi.org/10.1117/12.241836
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Cited by 12 scholarly publications and 7 patents.
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KEYWORDS
Polymers

Resistance

Lithography

Transparency

Etching

Lithium

Polymerization

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