Protecting groups for 193-nm photoresists

Robert D. Allen; Ratnam Sooriyakumaran; Juliann Opitz; Gregory M. Wallraff; Richard A. Di Pietro; Gregory Breyta; Donald C. Hofer; Roderick R. Kunz; Saikumar Jayaraman; Robert A. Shick; Brian L. Goodall; Uzodinma Okoroanyanwu; C. Grant Willson

doi:10.1117/12.241832

14 June 1996 Protecting groups for 193-nm photoresists

Robert D. Allen, Ratnam Sooriyakumaran, Juliann Opitz, Gregory M. Wallraff, Richard A. Di Pietro, Gregory Breyta, Donald C. Hofer, Roderick R. Kunz, Saikumar Jayaraman, Robert A. Shick, Brian L. Goodall, Uzodinma Okoroanyanwu, C. Grant Willson

Author Affiliations +

Proceedings Volume 2724, Advances in Resist Technology and Processing XIII; (1996) https://doi.org/10.1117/12.241832
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

Two versions of 193-nm single layer resists based on acrylic polymer chemistry have been described previously. The version 1 resist is a tool-testing version and is based on a methacrylate terpolymer structure. Its etch resistance analogue (version 2 resist) contains alicyclic compounds attached to the acrylic backbone. Key to enabling the performance of version 2 resist are the use of steroid additives which behave principally as thermomechanical modifiers to improve the mechanical properties of these rigid polymers through plasticization. We used the tertiary-butyl ester protecting group in these resists for thermal stability and other considerations. This paper describes an investigation of the impact of acid-cleavable protecting group structure on the properties of a series of model acrylic polymers. In this investigation, factors such as thermochemical stability, reactivity to photogenerated acid, and dissolution properties of exposed films as a function of dose were examined. A new highly reactive protecting group is introduced in this study, the tetrahydrofuranyl ester (THF) of methacrylic acid. Additionally, we introduce a new polymer family (polynorbornenes) with superior etch resistance, significantly broadening the polymer chemistry available for the construction of new 193-nm photoresists.

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Robert D. Allen, Ratnam Sooriyakumaran, Juliann Opitz, Gregory M. Wallraff, Richard A. Di Pietro, Gregory Breyta, Donald C. Hofer, Roderick R. Kunz, Saikumar Jayaraman, Robert A. Shick, Brian L. Goodall, Uzodinma Okoroanyanwu, and C. Grant Willson "Protecting groups for 193-nm photoresists", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); https://doi.org/10.1117/12.241832

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