Improving SEM linewidth metrology by two-dimensional scanning force microscopy

Mark D. Lagerquist; Wayne Bither; Roger Brouillette

doi:10.1117/12.240106

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21 May 1996 Improving SEM linewidth metrology by two-dimensional scanning force microscopy

Mark D. Lagerquist, Wayne Bither, Roger Brouillette

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Proceedings Volume 2725, Metrology, Inspection, and Process Control for Microlithography X; (1996) https://doi.org/10.1117/12.240106
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

As lithographic feature sizes in semiconductor fabrication shrink, sidewall shape comprises a greater percentage of the overall linewidth. Scanning electron microscope (SEM) metrology thereby becomes more dependent on geometry. To determine SEM sensitivity to sidewall behavior, samples are cleaved and compared to cross-sectional SEM measurements. Two- dimensional scanning force microscopy (2D-SFM), which uses unique probes and scan control to profile steep and complex sidewall geometries, shows promise as an alternative to the destructive and costly cross-sectioning technique. Repeatability studies on a variety of lithographic features show 2D-SFM capability and feasibility as a linewidth metrology tool, demonstrating less than 10 nm 3-sigma precision. Several application scenarios are examined where 2D-SFM measurements are compared to SEM measurements. The results demonstrate 2D-SFM can complement and improve SEM linewidth measurement understanding.

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Mark D. Lagerquist, Wayne Bither, and Roger Brouillette "Improving SEM linewidth metrology by two-dimensional scanning force microscopy", Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); https://doi.org/10.1117/12.240106

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