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21 May 1996 Linewidth measurement of wafers using SEM and its uncertainty evaluation
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We have developed a linewidth/pitch measurement system of wafers used in semiconductor manufacturing process. The system was modified from a conventional scanning electron microscope and can be used to measure. In our system we can measure by two methods. The first method is digital scanning method in which the electron beam is digitally scanned by two D/A converters and the signal of secondary electron obtained by an A/D converter is analyzed. And then we can determine linewidth/pitch using edge defining algorithm. The second method is absolute method using laser interferometer in which the electron beam is fixed and the specimen is set on a precise scanning stage driven by a piezo electric transducer. The linewidth/pitch of the specimen has been determined from the signal of edge and the distance between signal of left and right edges is measured by laser interferometer. In this paper, we describe our overall measuring system and measurement method and show the uncertainty estimation of digital scanning method according to a guide published by the International Organization for Standardization (ISO). In this estimation, the expanded uncertainty from instrument and sample was 0.040 micrometer and that only from instrument was 0.033 micrometer.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yeong-Uk Ko, TaeBong Eom, Ki-Hong Kim, and Seung-Woo Kim "Linewidth measurement of wafers using SEM and its uncertainty evaluation", Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996);

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