Minimizing optical proximity effect at subhalf-micron resolution by the variation of stepper lens operating conditions at i-line, 248-nm, and 193-nm wavelengths

Graham G. Arthur; Brian Martin

doi:10.1117/12.240130

21 May 1996 Minimizing optical proximity effect at subhalf-micron resolution by the variation of stepper lens operating conditions at i-line, 248-nm, and 193-nm wavelengths

Graham G. Arthur, Brian Martin

Author Affiliations +

Proceedings Volume 2725, Metrology, Inspection, and Process Control for Microlithography X; (1996) https://doi.org/10.1117/12.240130
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

The forms of optical proximity effect (OPE) known as dense/isolated offset and line-end shortening are investigated by computer simulation using the programs Prolith/2 and SOLID. It is shown that as the partial coherence and numerical aperture are varied, the printing error due to these OPEs can change from positive, through zero to negative, suggesting that if an appropriate set of operating conditions is selected proximity effect can be reduced and even eliminated thus relaxing one of the many stringent reticle design specifications. This not only enables the user to tailor the operating conditions of the imaging system to his particular requirements, but also highlights a possible requirement for future wafer steppers to be made variable over as wide a range of operating conditions as is practicable.

Citation Download Citation

Graham G. Arthur and Brian Martin "Minimizing optical proximity effect at subhalf-micron resolution by the variation of stepper lens operating conditions at i-line, 248-nm, and 193-nm wavelengths", Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); https://doi.org/10.1117/12.240130

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