Characterization of resists and antireflective coatings by spectroscopic ellipsometry in the UV and deep-UV range

Pierre Boher; Jean-Philippe Piel; Christophe Defranoux; Jean-Louis P. Stehle; Louis Hennet

doi:10.1117/12.240988

7 June 1996 Characterization of resists and antireflective coatings by spectroscopic ellipsometry in the UV and deep-UV range

Pierre Boher, Jean-Philippe Piel, Christophe Defranoux, Jean-Louis P. Stehle, Louis Hennet

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Proceedings Volume 2726, Optical Microlithography IX; (1996) https://doi.org/10.1117/12.240988
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

Antireflective coatings and resists are characterized precisely by spectroscopic ellipsometry from 800nm to UV and deep UV 193nm. A procedure based on the use of a polynomial dispersion law to take into account the optical indexes of the ARC in the region where it is transparent is developed and tested on samples with different thicknesses. The values obtained by this procedure are shown to be in perfect agreement with grazing x-ray reflection measurements made on the same samples. The procedure is valid even for very thin ARC. We show that using this thickness, the optical indexes can be extracted directly in all the wavelength range of the SE measurements. Practical example including a top ARC, a resist and a bottom ARC is analyzed in the same way. The physical parameters of the entire trilayer structure are deduced at the different working wavelengths. The expected reflectance performance are simulated using the same physical model and the same software.

Citation Download Citation

Pierre Boher, Jean-Philippe Piel, Christophe Defranoux, Jean-Louis P. Stehle, and Louis Hennet "Characterization of resists and antireflective coatings by spectroscopic ellipsometry in the UV and deep-UV range", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); https://doi.org/10.1117/12.240988

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