Image and resist profile by sublayer variation in deep-UV lithography

Hye-Keun Oh; So-Yeon Baek; Seung-Wook Park; Kun-Sang Lee

doi:10.1117/12.240960

7 June 1996 Image and resist profile by sublayer variation in deep-UV lithography

Hye-Keun Oh, So-Yeon Baek, Seung-Wook Park, Kun-Sang Lee

Proceedings Volume 2726, Optical Microlithography IX; (1996) https://doi.org/10.1117/12.240960
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

In order to make next generation ultra large scale integrated circuits, we have to form sub- quarter micron patterns. Among the several lithographic choices, the enhanced optical lithography techniques of using deep UV sources are strong candidates. The aerial image study shows the combination of annular illumination, binary intensity mask and pupil filter can be applied to all kinds of patterns. This optimum combination is applied to the resist profile study to find out the process latitude. We also investigated the process latitude variation by changing the sublayers such as anti-reflection coating, polysilicon, oxide and nitride.

Citation Download Citation

Hye-Keun Oh, So-Yeon Baek, Seung-Wook Park, and Kun-Sang Lee "Image and resist profile by sublayer variation in deep-UV lithography", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); https://doi.org/10.1117/12.240960

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