CMOS/CdHgTe hybrid technology for long-linear arrays with time delay and integration and element deselection

C. P. Arthurs; Ian M. Baker; Graham J. Crimes; S. Bains; D. C. Murray

doi:10.1117/12.243487

27 June 1996 CMOS/CdHgTe hybrid technology for long-linear arrays with time delay and integration and element deselection

C. P. Arthurs, Ian M. Baker, Graham J. Crimes, S. Bains, D. C. Murray

Author Affiliations +

Proceedings Volume 2744, Infrared Technology and Applications XXII; (1996) https://doi.org/10.1117/12.243487
Event: Aerospace/Defense Sensing and Controls, 1996, Orlando, FL, United States

Abstract

This paper discusses the technology used by GMIRL for high performance long linear arrays based on CdHgTe/CMOS hybrid multiplexers. Modern silicon processes allow the realization of a high degree of functionality within focal plane detectors. GMIRL have used this enhanced functionality to facilitate the deselection of defective elements within a diode array and provide time delay and integration. Two design approaches have been evaluated leading to the design and manufacture of high performance arrays for imaging applications. The resulting detector allows the enhancement of the signal to noise ratio at low IR flux levels and has a low overall power consumption, while requiring the minimum of real time correction for nonuniformities. The design can be readily adapted to suit arrays of varying length. The infrared sensor technology is based on CdHgTe (CMT) material grown by a tellurium rich, liquid phase epitaxy (LPE) process. Lateral collection photodiode arrays are fabricated within this material as a silicon CMT hybrid structure.

Citation Download Citation

C. P. Arthurs, Ian M. Baker, Graham J. Crimes, S. Bains, and D. C. Murray "CMOS/CdHgTe hybrid technology for long-linear arrays with time delay and integration and element deselection", Proc. SPIE 2744, Infrared Technology and Applications XXII, (27 June 1996); https://doi.org/10.1117/12.243487

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