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27 June 1996 Performance improvement of HgCdTe photoconductive detectors
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Abstract
Highly sensitive HgCdTe infrared photoconductive detectors have been developed for detecting 5 - 8 micrometer wavelength band. HgCdTe crystals were grown with the solid state recrystallization method and Cd composition was adjusted to 23.5%. The detectors possess an optical mask and asymmetric electrodes. The responsivity of the detectors depends on bias current direction. Higher responsivity was obtained with bias current flowing from a wide electrode to a narrow one. This responsivity value is 5 to 10 times larger than that of a standard detector which has symmetric electrodes and no optical mask. One of the new highly sensitive detectors was installed in a thermal imaging system and was found to be applicable to non-destructive diagnoses of buildings.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masahiko Sano, Keiji Miyamoto, Naoki Oda, and Y. Fujino "Performance improvement of HgCdTe photoconductive detectors", Proc. SPIE 2744, Infrared Technology and Applications XXII, (27 June 1996); https://doi.org/10.1117/12.243450
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