Paper
26 June 1996 Low-noise capacitive transimpedance amplifier performance versus alternative IR detector interface schemes in submicron CMOS
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Abstract
We compare the capacitive transimpedance amplifier (CTIA) to two other IR detector interface circuits using data compiled from hybrid FPAs in various formats from 8 X 8 to 1024 X 1024. The CTIA generally offers the best overall performance characteristics including read noise as low as 27 e- at signal bandwidths compatible with TV-type frame rates, low power dissipation (in some cases significantly less than 200 nW per pixel), and sufficiently low MOSFET self-emission for background-limited sensitivity at scene backgrounds significantly less than 109 photons/cm2- s. The alternative schemes should, however, be considered especially when very high transimpedance is needed at moderate bandwidths or when radiometric linearity is not required.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lester J. Kozlowski "Low-noise capacitive transimpedance amplifier performance versus alternative IR detector interface schemes in submicron CMOS", Proc. SPIE 2745, Infrared Readout Electronics III, (26 June 1996); https://doi.org/10.1117/12.243526
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Cited by 22 scholarly publications.
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KEYWORDS
Sensors

Field effect transistors

Amplifiers

Modulation

Capacitance

Capacitors

Infrared detectors

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