Photoelectric memory in GaAs/AlGaAs quantum well infrared photodetectors

Michail A. Dem'yanenko; Victor N. Ovsyuk; Valerii V. Shashkin; Aleksandr I. Toropov

doi:10.1117/12.243037

17 June 1996 Photoelectric memory in GaAs/AlGaAs quantum well infrared photodetectors

Michail A. Dem'yanenko, Victor N. Ovsyuk, Valerii V. Shashkin, Aleksandr I. Toropov

Proceedings Volume 2746, Infrared Detectors and Focal Plane Arrays IV; (1996) https://doi.org/10.1117/12.243037
Event: Aerospace/Defense Sensing and Controls, 1996, Orlando, FL, United States

Abstract

GaAs/Al_xGa_1-xAs quantum well infrared photodetectors grown by molecular-beam epitaxy with x varied from 0.26 up to 0.43 are investigated. The huge increase of dark current (by 2 - 3 orders) in photodetectors with x approximately equals 0.4 after illumination of samples by optical radiation ((lambda) < 1.3 micrometers ) at lowered temperatures and the subsequent slow dark current relaxation are observed. The model of barriers with a local sag potential increasing tunnel current is proposed. The value of the sag potential is increased at optical ionization of unintentional deep levels in the barrier and is decreased at the subsequent capture of electrons from conduction band on deep levels. Analysis of the dark current kinetics allowed to determine some parameters of these deep levels.

Citation Download Citation

Michail A. Dem'yanenko, Victor N. Ovsyuk, Valerii V. Shashkin, and Aleksandr I. Toropov "Photoelectric memory in GaAs/AlGaAs quantum well infrared photodetectors", Proc. SPIE 2746, Infrared Detectors and Focal Plane Arrays IV, (17 June 1996); https://doi.org/10.1117/12.243037

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