Multilevel Resist For Photolithography Utilizing An Absorbing Dye: Simulation And Experiment

M. M. O'Toole; E. D. Liu; M. S. Chang

doi:10.1117/12.931883

28 July 1981 Multilevel Resist For Photolithography Utilizing An Absorbing Dye: Simulation And Experiment

M. M. O'Toole, E. D. Liu, M. S. Chang

Proceedings Volume 0275, Semiconductor Microlithography VI; (1981) https://doi.org/10.1117/12.931883
Event: 1981 Microlithography Conferences, 1981, San Jose, United States

Abstract

Linewidth control using a tri-level resist system on wafers with topology is investigated. An absorbing dye is incorporated in the bottom layer to improve the usable resolution. Resist patterns of 1 μm and 0.75 μm over underlying geometries are demonstrated using a projection aligner. The advantages of a multilevel system are investigated using an exposure and development simulation program for optical lithography. The relative contributions of planarization and reflection suppression are discussed.

Citation Download Citation

M. M. O'Toole, E. D. Liu, and M. S. Chang "Multilevel Resist For Photolithography Utilizing An Absorbing Dye: Simulation And Experiment", Proc. SPIE 0275, Semiconductor Microlithography VI, (28 July 1981); https://doi.org/10.1117/12.931883

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