Methods for addressing electron-trapping optical memory material

Alastair D. McAulay; Junqing Wang

doi:10.1117/12.243129

12 June 1996 Methods for addressing electron-trapping optical memory material

Alastair D. McAulay, Junqing Wang

Proceedings Volume 2754, Advances in Optical Information Processing VII; (1996) https://doi.org/10.1117/12.243129
Event: Aerospace/Defense Sensing and Controls, 1996, Orlando, FL, United States

Abstract

Electron optical trapping material (ETOM) has proven to be a viable material for thin film optical memory and is being explored commercially for read/write disk. The characteristics of ETOM are discussed including new measurements at femtosecond speeds. The advantages and disadvantages of ETOM are considered. An example of a hierarchical deflection system is provided that uses mirrors, AO cells and EO cells. The status of research in all-optical switches is reviewed briefly for Kerr, cross phase modulation, TOAD, directional couplers, and semiconductors. An example shows how switches can be used to interleave demultiplex an incoming optical fiber bit stream at greater than 10 Gbps into lower data rate channels for storage using deflectors or moving media.

Citation Download Citation

Alastair D. McAulay and Junqing Wang "Methods for addressing electron-trapping optical memory material", Proc. SPIE 2754, Advances in Optical Information Processing VII, (12 June 1996); https://doi.org/10.1117/12.243129

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