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30 April 1981 Optical Properties Of Proton Implanted N-Type GaAs
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The optical properties of semiconductor crystalline materials can be altered through ion implantation according to various physical mechanisms. In this paper we examine the optical changes in GaAs brought about by free carrier compensation. N-type GaAs wafers with a high free carrier concentration are implanted with protons having an energy of 300 keV. The infrared properties of the resulting altered surface layer are characterized by infrared reflectance measurements. A spectrophotometer is used to measure the reflectivity of the implanted wafers from 4000 cm -1 to 200 cm -1. Interference fringes typical of a thin layer/substrate structure is observed. From the location of the fringes and a classical dielectric model, the effective thickness and the average free carrier concentration of the altered layer are obtained. This data is used in computer simulations to achieve good agreement with the measured reflectivity over the entire spectral range.
© (1981) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. M. Zavada, H. A. Jenkinson, and T. J. Gavanis "Optical Properties Of Proton Implanted N-Type GaAs", Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981);

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