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11 April 1996 Tm:Y2SiO5 and Tm:SrY4(SiO4)3O microchip lasers
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Proceedings Volume 2772, Laser Optics '95: Solid State Lasers; (1996) https://doi.org/10.1117/12.238116
Event: Laser Optics '95, 1995, St. Petersburg, Russian Federation
Abstract
Laser operation in the 2 micrometers -wavelength range is reported. Two different crystals are studied: Y2SiO5 and SrY4(SiO4)3O doped with 5% thulium. Microchip lasers with flat/flat monolithic cavity are operated at room temperature, with Ti:Sapphire laser pumping. Threshold as low as 130 mw of incident pump power and slope efficiency as high as 46% were obtained. The emission spectrum of such microchip lasers appears to be very wide (20 to 30 nm). Laser experiments with laser diode pumping are also reported.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Philippe Thony, Corinne Borel, and Roselyne Templier "Tm:Y2SiO5 and Tm:SrY4(SiO4)3O microchip lasers", Proc. SPIE 2772, Laser Optics '95: Solid State Lasers, (11 April 1996); https://doi.org/10.1117/12.238116
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