Paper
11 March 1996 Laser deposition of thin buffer and YBCO thin films on Si and GaAs substrates
Author Affiliations +
Proceedings Volume 2777, ALT'95 International Symposium on Advanced Materials for Optics and Optoelectronics; (1996) https://doi.org/10.1117/12.232214
Event: ALT '95 International Conference: Advanced Materials for Optics and Optoelectronics, 1995, Prague, Czech Republic
Abstract
The growth and characterization of YBaCuO thin films and related buffer layers (BaTiO3, ZrO2, BaTiO3, LiNbO3) grown by laser ablation on Si and GaAs substrates, are described. Both buffers and YBuCuO layers have been deposited using XeCl excimer laser (308 nm). The morphology and structure of the films have been determined using XRD and SEM analyses. A good quality textured YBaCuO film could be grown on single crystal as well as polycrystalline buffer layer deposited on Si and GaAs. The key to the successful film deposition is the low processing temperatures involved, which minimized the interface reactions as observed by EDAX spectroscopy, as well as direct cw carbon-dioxide laser irradiation of growing film.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rumen I. Tomov, Peter A. Atanasov, and Valery S. Serbezov "Laser deposition of thin buffer and YBCO thin films on Si and GaAs substrates", Proc. SPIE 2777, ALT'95 International Symposium on Advanced Materials for Optics and Optoelectronics, (11 March 1996); https://doi.org/10.1117/12.232214
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KEYWORDS
Gallium arsenide

Silicon

Thin films

Superconductors

Carbon dioxide lasers

Scanning electron microscopy

Silicon films

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