Deposition and analysis of carbon and silicon clusters generated by laser-induced gas phase reaction

M. Ehbreht

doi:10.1117/12.2298965

1 September 1996 Deposition and analysis of carbon and silicon clusters generated by laser-induced gas phase reaction

M. Ehbreht

Proceedings Volume 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology; 27782B (1996) https://doi.org/10.1117/12.2298965
Event: 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 1996, Taejon, Korea, Republic of

Abstract

Laser driven gas-phase synthesis in a flow reactor was employed for the production of carbon and silicon cluster beams starting from gaseous compounds. It is based on a CO2-laser-induced decomposition of molecular gases containing carbon and silicon, such as C2H2 and SiH4. By introducing a skimmer into the reaction zone, the generated clusters are transferred to the free molecular flow and analyzed with a time-of-flight mass spectrometer. These clusters were deposited on a silicon or saphire target at room temperature. Micro-Raman spectroscopy techniques was used for- characterization of this deposits. The present studies show that the laser-driven nucleation in a flow reactor is a powerful technique to produce fullerenes and silicon quantum dots and other nano-size semiconductors or high-temperature evaporated materials.

Citation Download Citation

M. Ehbreht "Deposition and analysis of carbon and silicon clusters generated by laser-induced gas phase reaction", Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 27782B (1 September 1996); https://doi.org/10.1117/12.2298965

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