Morphology of thin film growth of gallium nitride by atmospheric pressure organometallic vapor phase epitaxy

S. M. Liao; Jung-hung Wen; H. F. Hung; S. M. Lan

doi:10.1117/12.237057

26 April 1996 Morphology of thin film growth of gallium nitride by atmospheric pressure organometallic vapor phase epitaxy

S. M. Liao, Jung-hung Wen, H. F. Hung, S. M. Lan

Author Affiliations +

Proceedings Volume 2779, 3rd International Conference on Intelligent Materials and 3rd European Conference on Smart Structures and Materials; (1996) https://doi.org/10.1117/12.237057
Event: 3rd International Conference on Intelligent Materials, 1996, Lyon, France

Abstract

Modern approaches to the growth of high quality gallium nitride (GaN) thin films have focused on the use of organometallic vapor phase epitaxy (OMVPE). One of the keys to obtain the high quality thin film was the use of a thin buffer layer between the sapphire substrate and the growth film. Thin films of GaN were successfully prepared by our atmospheric pressure OMVPE system using GaN buffer layer over basal plane (0001) sapphire substrates. The present study will discuss the role of buffer and the influence of the temperature and ammonia/trimethylgallium (NH3/TMG) mass flow ratio in controlling morphology of GaN thin films. Normarski differential interference contrast optical microscopy and scanning electron microscopy reveal the surface and cross-section morphologies of different growth conditions. To the best of our knowledge the `volcanic cone-like' hillock structure describe here is the first reported the morphology for single crystal GaN thin films.

Citation Download Citation

S. M. Liao, Jung-hung Wen, H. F. Hung, and S. M. Lan "Morphology of thin film growth of gallium nitride by atmospheric pressure organometallic vapor phase epitaxy", Proc. SPIE 2779, 3rd International Conference on Intelligent Materials and 3rd European Conference on Smart Structures and Materials, (26 April 1996); https://doi.org/10.1117/12.237057

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