Paper
23 September 1996 Laser reactive ablation deposition of carbon nitride thin films
Armando Luches, A. P. Caricato, Gilberto Leggieri, Maurizio Martino, Alessio Perrone, G. Barucca, Paolo Mengucci, Joseph Zemek
Author Affiliations +
Proceedings Volume 2789, High-Power Lasers: Applications and Emerging Applications; (1996) https://doi.org/10.1117/12.251190
Event: Lasers, Optics, and Vision for Productivity in Manufacturing I, 1996, Besancon, France
Abstract
Thin amorphous C-N films were deposited on silicon substrates at room temperature by XeCl laser ablation of graphite in low pressure nitrogen and ammonia atmospheres. The deposition rates decrease with increasing ambient pressure. Films deposited in NH3 are thinner than films deposited in N2 at the same ambient pressure, their N/C atomic ratios are higher, but they present a lower quantity of N atoms bound to C atoms. Different diagnostic techniques were used to characterize the deposited films, which result homogeneous, hard and present a high electrical resistivity.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Armando Luches, A. P. Caricato, Gilberto Leggieri, Maurizio Martino, Alessio Perrone, G. Barucca, Paolo Mengucci, and Joseph Zemek "Laser reactive ablation deposition of carbon nitride thin films", Proc. SPIE 2789, High-Power Lasers: Applications and Emerging Applications, (23 September 1996); https://doi.org/10.1117/12.251190
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Cited by 4 scholarly publications.
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KEYWORDS
Carbon

Laser ablation

Chemical species

Nitrogen

Thin films

Atmospheric modeling

Silicon

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