Paper
24 July 1996 Cleaning process for x-ray masks
Yasunao Saitoh, Takashi Ohkubo, Ikuo Okada, Misao Sekimoto, Tadahito Matsuda
Author Affiliations +
Abstract
A cleaning process for x-ray mask fabrication has been developed that virtually eliminates mask defects. To introduce the wet-cleaning process into the x-ray mask fabrication process, a new mask cleaning system is manufactured to prevent the mask membrane from breaking due to liquid pressure. Because Ta is chemically stable to a strong acid, we employ a wet-cleaning process using a strong acid such as H2S04 + H202 in order to eliminate contamination that occurs in the x-ray mask fabrication process, such as back-etching of the substrate. and Ta pattern etching. Most metallic and organic defects were eliminated by the strong acid wet-cleaning. By introducing this cleaning process, occurrence of mask defects was drastically reduced: the defect density was reduced to less than 5 defects/cm2 The patterns with widths below 0.2 μm were not damaged by acid cleaning, and pattern positioning distortion did not occur.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasunao Saitoh, Takashi Ohkubo, Ikuo Okada, Misao Sekimoto, and Tadahito Matsuda "Cleaning process for x-ray masks", Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); https://doi.org/10.1117/12.245199
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KEYWORDS
Photomasks

Tantalum

Mask making

Etching

Distortion

X-rays

Inspection

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