Exposure of 895i resist using a vector scan Gaussian electron-beam lithography system

Sheldon M. Kugelmass; Joseph Mitchell; John T. Poreda

doi:10.1117/12.245236

24 July 1996 Exposure of 895i resist using a vector scan Gaussian electron-beam lithography system

Sheldon M. Kugelmass, Joseph Mitchell, John T. Poreda

Proceedings Volume 2793, Photomask and X-Ray Mask Technology III; (1996) https://doi.org/10.1117/12.245236
Event: Symposium on Photomask and X-Ray Mask Technology, 1996, Kawasaki City, Japan

Abstract

A positive tone, optical resist, OCG 895i, was exposed using the Lepton EBES4, a vector scan Gaussian electron beam lithography system. Proximity Effect Corrections (PEC) were applied via dose modulation on a figure-by-figure basis at write time. Test patterns were corrected using a simple "framing" technique that is the first step in a phased implementation of a complete PEC solution. Figures were separated into bulk and frame regions, with different doses being applied to each. The corrected pattern was exposed in a single pass using a single pattern file. The mask lithography quality of these exposures was evaluated by measurement of CD Linearity, Line Edge Roughness and CD X-Y Bias. A throughput study was conducted to determine the impact of using lower sensitivity resists on mask write times. A series of test jobs was written at conditions consistent with exposure doses of 2 and 8 μC/cm². This 4X dose increase resulted in a write times that were only 1 .5X longer. A 64 MBit DRAM pattern, prepared with framing, with 50 nm address was exposed at 8 μC/cm² in 3 hr 35 min.

Citation Download Citation

Sheldon M. Kugelmass, Joseph Mitchell, and John T. Poreda "Exposure of 895i resist using a vector scan Gaussian electron-beam lithography system", Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); https://doi.org/10.1117/12.245236

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