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24 July 1996 Investigation on application of chromium-based materials to attenuated phase-shift masks for DUV exposure
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Proceedings Volume 2793, Photomask and X-Ray Mask Technology III; (1996) https://doi.org/10.1117/12.245204
Event: Symposium on Photomask and X-Ray Mask Technology, 1996, Kawasaki City, Japan
Abstract
A simple method of optical constant evaluation is employed to measure refractive index (n) and absorption coefficient (k) of chromium oxide thin films deposited on transparent substrate in deep ultraviolet range. The validity of the method is verified by comparison with n. k values calculated from transmittance and phase shift measurement. The calculated n, k values of chromium oxide film were 3.3 and 0.64 at 193 nrn, respectively. It was found that there existed optimum film thickness in the range of 45-55 nm for DUV attenuated phase shift at 193 nm. Moreover the film quality has been improved to yield smooth and uniform film surface.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Seungbum Hong, Eunah Kim, Zhong-Tao Jiang, Byeong-Soo Bae, Kwangsoo No, Woosuck Shin, Sung-Chul Lim, Sang-Gyun Woo, and Young-Bum Koh "Investigation on application of chromium-based materials to attenuated phase-shift masks for DUV exposure", Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); https://doi.org/10.1117/12.245204
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