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24 July 1996 Pattern-data preparation method to enhance high-throughput mask fabrication in variable-shaped e-beam writing system
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Proceedings Volume 2793, Photomask and X-Ray Mask Technology III; (1996) https://doi.org/10.1117/12.245217
Event: Symposium on Photomask and X-Ray Mask Technology, 1996, Kawasaki City, Japan
Abstract
We have developed a new method of preparing pattern data to increase throughput of an EB writing system. The main idea is to expand cells smaller than a threshold size to the corresponding upper level cells during hierarchical shape data operations, which leads to reduction of the number of subfields and shots in our EB writing system. The cell expansions, however, could cause increase in the data volume and data conversion time as a result of destroying the hierarchy of CAD data. Therefore, we have introduced an additional rule, that is, not to expand cell arrays which have more elements than a threshold number. The new data conversion processor, which adopts the above-mentioned cell expansion algorithm, has been applied to a 64Mbit and a 256Mbit DRAM. The new module was applied to three layers, that is, the trench layer, the gate poly layer and metal layer of each DRAM. As a result, we found that the number of subfields and the number of shots were reduced by about 60% and 35%, respectively, for the average of 6 layers. Resulting throughput was evaluated as 1.8 times for the average of 6 layers. Performance change in the conversion processor has been examined in terms of data volume and data conversion time, and is discussed in the paper.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shigehiro Hara, Eiji Murakami, Shunko Magoshi, Kiyomi Koyama, Hirohito Anze, Yoji Ogawa, A. Kabeya, S. Ooki, Tamaki Saito, T. Fujii, S. Sakamoto, Hiromi Suzuki, Mitsuhiro Yano, and Sadakazu Watanabe "Pattern-data preparation method to enhance high-throughput mask fabrication in variable-shaped e-beam writing system", Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); https://doi.org/10.1117/12.245217
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