Nonlinear reflection of medium-infrared light from a structure containing highly doped GaAs layers

Alexander I. Voronko; Gennady N. Shkerdin; Johan H. Stiens; Roger A. Vounckx

doi:10.1117/12.242142

10 June 1996 Nonlinear reflection of medium-infrared light from a structure containing highly doped GaAs layers

Alexander I. Voronko, Gennady N. Shkerdin, Johan H. Stiens, Roger A. Vounckx

Proceedings Volume 2801, Nonlinear Optics of Low-Dimensional Structures and New Materials; (1996) https://doi.org/10.1117/12.242142
Event: International Conference on Coherent and Nonlinear Optics, 1995, St. Petersburg, Russian Federation

Abstract

The optical non-linearity based on the non-parabolicity and the intervalley transfer in highly doped n-GaAs has been proposed. A large fraction of the light mass central valley population can be effectively transferred to the heavy mass satellite valleys by optically heating the free carriers with CO₂ laser light, leading to a non-linear refractive index n₂ of the order of 10^-8 cm²/W. Integrating such non-linear layers in a suitable interferometer drastically decreases the non-linear threshold value. Together with the intrinsically small intravalley and intervalley relaxation times (picosecond time scale), this optical heating effect can be used as a versatile tool for improving our understanding of carrier- lattice interactions and hot electron effects in highly doped semiconductors as well as an optical spectroscopic probe for investigating other ultrafast physical, chemical, or biological processes. By introducing feed-back mechanisms, all-optical clocks and delay lines could be conceived with response times of the order of a few ps.

Citation Download Citation

Alexander I. Voronko, Gennady N. Shkerdin, Johan H. Stiens, and Roger A. Vounckx "Nonlinear reflection of medium-infrared light from a structure containing highly doped GaAs layers", Proc. SPIE 2801, Nonlinear Optics of Low-Dimensional Structures and New Materials, (10 June 1996); https://doi.org/10.1117/12.242142

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