Epitaxial HgCdTe/CdTe Photodiodes For The 1 To 3 pm Spectral Region

J. G. Pasko; S. H. Shin; D. T. Cheung

doi:10.1117/12.931977

29 December 1981 Epitaxial HgCdTe/CdTe Photodiodes For The 1 To 3 μm Spectral Region

J. G. Pasko, S. H. Shin, D. T. Cheung

Proceedings Volume 0282, Technical Issues in Focal Plane Development; (1981) https://doi.org/10.1117/12.931977
Event: 1981 Technical Symposium East, 1981, Washington, D.C., United States

Abstract

Hg_l__xCd_x/cTe epitaxial layers have been successfully grown in various compositions, for 1-3 μm applications. n⁺/p junctions are formed either by a standard B-implantation into as-grown p-type layers or by doubly grown p- and n-layers. The SWIR HgCdTe photodiodes exhibit quantum efficiencies of 55-65% without AR coating. For the diodes with 1.39 μm cut-off at room temperature, the zero bias detector resistance-area (R_οA) product is 4 x 10⁴ Q-cm², and the dark current density is - 1 x 10^-4 Ω-cm² at half-breakdown voltage. The same values of - 104 Ω-cm² R_oA products have also been measured for 2.4 μm cut-off photodiodes at 195K. The energy gap and temperature dependence of RoA product is in excellent agreement with the bulk limited generation-recombination model. The breakdown voltages of SWIR diodes vary from 12 volts to greater than 130 volts, depending on the Cd composition (x) and base carrier concentrations.

Citation Download Citation

J. G. Pasko, S. H. Shin, and D. T. Cheung "Epitaxial HgCdTe/CdTe Photodiodes For The 1 To 3 μm Spectral Region", Proc. SPIE 0282, Technical Issues in Focal Plane Development, (29 December 1981); https://doi.org/10.1117/12.931977

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