Grating-tuned semiconductor MOPA lasers for precision spectroscopy

John H. Marquardt; Flavio C. Cruz; Michelle Stephens; Chris W. Oates; Leo W. Hollberg; James C. Bergquist; David F. Welch; David G. Mehuys; Steve Sanders

doi:10.1117/12.255336

21 October 1996 Grating-tuned semiconductor MOPA lasers for precision spectroscopy

John H. Marquardt, Flavio C. Cruz, Michelle Stephens, Chris W. Oates, Leo W. Hollberg, James C. Bergquist, David F. Welch, David G. Mehuys, Steve Sanders

Author Affiliations +

Proceedings Volume 2834, Application of Tunable Diode and Other Infrared Sources for Atmospheric Studies and Industrial Process Monitoring; (1996) https://doi.org/10.1117/12.255336
Event: SPIE's 1996 International Symposium on Optical Science, Engineering, and Instrumentation, 1996, Denver, CO, United States

Abstract

A standard grating-tuned extended-cavity diode laser is used for injection seeding of a tapered semiconductor laser/amplifier. With sufficient injection power the output of the amplifier takes on the spectral characteristics of the master laser. We have constructed master-oscillator power-amplifier systems that operator near 657 nm, 675 nm, 795 nm, and 850 nm. Although the characteristics vary from system to system, we have demonstrated output powers of greater than 700 mW in a single spatial mode, linewidths less than 1 kHz, coarse tuning greater than 20 nm, and continuous single-frequency scanning greater than 150 GHz. We discuss the spectroscopic applications of these high power, highly coherent, tunable diode lasers as applied to Ca, Hg⁺, I₂, and two-photon transitions in Cs.

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John H. Marquardt, Flavio C. Cruz, Michelle Stephens, Chris W. Oates, Leo W. Hollberg, James C. Bergquist, David F. Welch, David G. Mehuys, and Steve Sanders "Grating-tuned semiconductor MOPA lasers for precision spectroscopy", Proc. SPIE 2834, Application of Tunable Diode and Other Infrared Sources for Atmospheric Studies and Industrial Process Monitoring, (21 October 1996); https://doi.org/10.1117/12.255336

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