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18 December 1996 Preliminary test results of a resonant Ge:Ga far-infrared photoconductor
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Theoretical analysis indicates that resonant infrared photoconductors can achieve unit quantum efficiency at resonant frequencies. This concept, which is based on establishing a resonant absorption cavity internal to the detector element, offers numerous other enhancements and advantages over conventional detectors. Here, we present an overview of the operation of the device and outline the fabrication process of a Ge:Ga far-IR photoconductor. The preliminary test results performed on a prototype Ge:Ga detector show the expected resonant fringes with enhanced response. The summary of the results and the status of the project will be discussed.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jam Farhoomand, Bill Knowlton, Robert E. McMurray Jr., and Eugene E. Haller "Preliminary test results of a resonant Ge:Ga far-infrared photoconductor", Proc. SPIE 2842, Millimeter and Submillimeter Waves and Applications III, (18 December 1996);

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