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22 November 1996 Ultraprecision grinding of chemical vapor deposited silicon carbide mirrors for synchrotron radiation
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Chemically vapor deposited silicon carbide (CVD-SiC) is the most important material of mirrors for high-brightness synchrotron radiation beamlines, though the material is too difficult to be machined. It takes quite a long time to polish SiC substrate to make mirrors. This paper intends to reduce the machining time to make CVD-SiC mirrors by using ultra-precision grinding technology. The CVD-SiC sample has been ground into 0.4 nm rms in surface roughness by a resinoid-bonded diamond wheel and an ultra-precision surface grinder having a glass-ceramic spindle of extremely-low thermal expansion. The surface roughness of ground samples were measured with TOPO-3D and AFM. 88.7% reflectivity has been obtained on the ground CVD-SiC flat surface, measured with X-ray of 0.834 nm in wavelength at the grazing incidence angle of 0.7 - 0.95 degree. The reflectivity depends upon the angle between the direction of incident beam and grinding marks on the sample. The relationship between the surface roughness and grinding conditions was also discussed.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshiharu Namba "Ultraprecision grinding of chemical vapor deposited silicon carbide mirrors for synchrotron radiation", Proc. SPIE 2856, Optics for High-Brightness Synchrotron Radiation Beamlines II, (22 November 1996);

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