Gain and noise in very high-gain avalanche photodiodes: theory and experiment

Robert H. Redus; Richard Farrell

doi:10.1117/12.245118

19 July 1996 Gain and noise in very high-gain avalanche photodiodes: theory and experiment

Robert H. Redus, Richard Farrell

Proceedings Volume 2859, Hard X-Ray/Gamma-Ray and Neutron Optics, Sensors, and Applications; (1996) https://doi.org/10.1117/12.245118
Event: SPIE's 1996 International Symposium on Optical Science, Engineering, and Instrumentation, 1996, Denver, CO, United States

Abstract

Large area silicon avalanche photodiodes have been fabricated with maximum avalanche gains exceeding 10,000 and excellent signal to noise ratios. A model of device performance has been developed in which previously developed general expressions are numerically integrated using actual fabrication parameters. The gain, statistical fluctuations in the gain, electronic noise, and total peak broadening have been computed using this model. The results are in good agreement with measurements. The parameter k_eff was found to be 7.2 X 10^-4, allowing a high signal to noise ratio at gains of several thousand.

Citation Download Citation

Robert H. Redus and Richard Farrell "Gain and noise in very high-gain avalanche photodiodes: theory and experiment", Proc. SPIE 2859, Hard X-Ray/Gamma-Ray and Neutron Optics, Sensors, and Applications, (19 July 1996); https://doi.org/10.1117/12.245118

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