Paper
28 May 1997 Sensitivity and stability of IR photocathodes based on In0.53Ga0.47As/InP heterostructures with Schottky barrier intended for streak tubes
Eduard L. Nolle, Alexander M. Prokhorov, Yurij G. Sadofyev, Mikhail Ya. Schelev, Vyacheslav M. Senkov, Yurij D. Vulis
Author Affiliations +
Proceedings Volume 2869, 22nd International Congress on High-Speed Photography and Photonics; (1997) https://doi.org/10.1117/12.273449
Event: 22nd International Congress on High-Speed Photography and Photonics, 1996, Santa Fe, NM, United States
Abstract
Some technique is presented for IR photocathodes manufacturing on the basis of In0.53Ga0.47As/InP heterostructures with Shottky barrier. Discussed is a method for ultra-high vacuum transfer of the photocathodes into vacuum devices. It is shown that the sensitivity of photocathodes in a sealed out device at (lambda) equals 1.55 micrometers is two orders of magnitude higher comparing to the sensitivity of traditional Ag-Cs-O photocathodes. The developed photocathodes may be used in time analyzing image tubes covering the spectral range from 0.9 to 1.7 micrometers .
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eduard L. Nolle, Alexander M. Prokhorov, Yurij G. Sadofyev, Mikhail Ya. Schelev, Vyacheslav M. Senkov, and Yurij D. Vulis "Sensitivity and stability of IR photocathodes based on In0.53Ga0.47As/InP heterostructures with Schottky barrier intended for streak tubes", Proc. SPIE 2869, 22nd International Congress on High-Speed Photography and Photonics, (28 May 1997); https://doi.org/10.1117/12.273449
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KEYWORDS
Heterojunctions

Cesium

Gold

Silver

Manufacturing

Quantum efficiency

Reflection

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