SOG etch-back process induced surface roughness

Po-Tao Chu; Sen-Fu Chen; Jie-Shin Wu; Chih-Chien Hung; Ting-Huang Lin; Ying-Chen Chao

doi:10.1117/12.250877

13 September 1996 SOG etch-back process induced surface roughness

Po-Tao Chu, Sen-Fu Chen, Jie-Shin Wu, Chih-Chien Hung, Ting-Huang Lin, Ying-Chen Chao

Proceedings Volume 2875, Microelectronic Device and Multilevel Interconnection Technology II; (1996) https://doi.org/10.1117/12.250877
Event: Microelectronic Manufacturing 1996, 1996, Austin, TX, United States

Abstract

SOG film surface roughness had been observed after SOG etch- back process. The etching recipes' total pressure and the CF₄/CHF₃ etchant gas ratio had been identified to be the two dominant factors which will determine the degree of surface roughness after etch-back. The high total gas pressure and high gas ratio etch-back recipe can minimize the roughness. However, the high pressure and gas ratio trends will result in poor global planarization. In this study, the optimal SOG etch-back recipe had been determined based on the degree of SOG roughness and global planarization. The degree of roughness was measured by the Atomic Force Microscopy.

Citation Download Citation

Po-Tao Chu, Sen-Fu Chen, Jie-Shin Wu, Chih-Chien Hung, Ting-Huang Lin, and Ying-Chen Chao "SOG etch-back process induced surface roughness", Proc. SPIE 2875, Microelectronic Device and Multilevel Interconnection Technology II, (13 September 1996); https://doi.org/10.1117/12.250877

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