Optical characterization of amorphous and polycrystalline silicon films

Effiong Ibok; Shyam Garg; George G. Li; A. Rahim Forouhi; Iris Bloomer; Joel W. Ager III

doi:10.1117/12.250929

13 September 1996 Optical characterization of amorphous and polycrystalline silicon films

Effiong Ibok, Shyam Garg, George G. Li, A. Rahim Forouhi, Iris Bloomer, Joel W. Ager III

Proceedings Volume 2877, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III; (1996) https://doi.org/10.1117/12.250929
Event: Microelectronic Manufacturing 1996, 1996, Austin, TX, United States

Abstract

This paper describes a methodology that has been incorporated into a fully integrated measurement system, the n&k Analyzer, that determines simultaneously the thickness, energy band gap, and n and k spectra (from 190 to 900 nm) of various forms of silicon, i.e., a-Si, poly-Si films, and mixtures of a-Si and poly-Si films. Additionally, the system also measures the average surface roughness. In turn, the n and k spectra of such films can be correlated to processing conditions, temperature being the most important one in LPCVD method. The n&k Analyzer can be used to identify the amorphous-polycrystalline transition regime and characterization of films produced in this regime.

Citation Download Citation

Effiong Ibok, Shyam Garg, George G. Li, A. Rahim Forouhi, Iris Bloomer, and Joel W. Ager III "Optical characterization of amorphous and polycrystalline silicon films", Proc. SPIE 2877, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III, (13 September 1996); https://doi.org/10.1117/12.250929

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