Beamline and exposure station for deep x-ray lithography at the advanced photon source

Barry P. Lai; Derrick C. Mancini; Wenbing Yun; Efim S. Gluskin

doi:10.1117/12.250948

13 September 1996 Beamline and exposure station for deep x-ray lithography at the advanced photon source

Barry P. Lai, Derrick C. Mancini, Wenbing Yun, Efim S. Gluskin

Proceedings Volume 2880, Microlithography and Metrology in Micromachining II; (1996) https://doi.org/10.1117/12.250948
Event: Micromachining and Microfabrication '96, 1996, Austin, TX, United States

Abstract

The Advanced Photon Source (APS) is a third-generation synchrotron radiation source. With a characteristic x-ray energy of 19.5 keV and highly collimated beam (< 0.1 mrad), the APS is well suited for producing high-aspect- ratio microstructures in thick resist films (> 1 mm) using deep x-ray lithography (DXRL). The 2-BM beamline has been constructed and will be used for DXRL at the APS. Selection of the appropriate x-ray energy range is accomplished by a variable-angle mirror and various filters installed in the beamline. At the exposure station, the beam size will be 100 (H) X 5 (V) mm². Uniform exposure will be achieved by a high-speed (100 mm/sec) vertical scanner. The scanner allows precise angular (approximately 0.1 mrad) and positional (< 1 micrometers ) control of the sample, allowing full use of the highly collimated beam for lateral accuracy and control of sidewall slopes during exposure of thick resists, as well as the generation of conicals and other profiles. For 1-mm thick PMMA, a 100 X 25 mm² area can be fully exposed in about 1/2 hour, while even 10-mm thick PMMA will require only 2 - 3 hours.

Citation Download Citation

Barry P. Lai, Derrick C. Mancini, Wenbing Yun, and Efim S. Gluskin "Beamline and exposure station for deep x-ray lithography at the advanced photon source", Proc. SPIE 2880, Microlithography and Metrology in Micromachining II, (13 September 1996); https://doi.org/10.1117/12.250948

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