Paper
23 September 1996 Analysis of field-emitter efficiency variations with geometry
In-Jae Chung, Antonino Iannella, Alex Hariz
Author Affiliations +
Proceedings Volume 2881, Microelectronic Structures and MEMS for Optical Processing II; (1996) https://doi.org/10.1117/12.251252
Event: Micromachining and Microfabrication '96, 1996, Austin, TX, United States
Abstract
Prompted by the successful experimental control of concavity of the field emitter profile, simulations on the effect of shape change and cone-side curvature on the field strength of the emitter were carried out. The dependency of field strength on the cone angle or the curvature angle is found to be approximately linear with 5.77 X 104 V/cm/degree. On the other hand, the dependency on the curvature angle (curvature radius) is approximately 4.98 X 104 V/cm/degree which is slightly lower than that of the straight cone angle variation but the average field intensity is about 1.6% higher than that of the pyramidal type. These results indicate that the cone-side curvature angle has a more pronounced effect on the strength of the electrical field than the cone angle. Hence a precise control of cone shape is an effective method of obtaining high electric fields. Optimal shapes of the field emitter can be achieved using appropriate anisotropic, followed by isotropic, etching techniques.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
In-Jae Chung, Antonino Iannella, and Alex Hariz "Analysis of field-emitter efficiency variations with geometry", Proc. SPIE 2881, Microelectronic Structures and MEMS for Optical Processing II, (23 September 1996); https://doi.org/10.1117/12.251252
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KEYWORDS
Etching

Silicon

Anisotropic etching

Information operations

Isotropic etching

Electron beams

Fabrication

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