4X reticles with 3% linewidth control for the development of 0.18-um lithography

Rik M. Jonckheere; Jozef Moonens; Goedele Potoms; Inga Bovie; Luc Van den Hove

doi:10.1117/12.262811

27 December 1996 4X reticles with 3% linewidth control for the development of 0.18-um lithography

Rik M. Jonckheere, Jozef Moonens, Goedele Potoms, Inga Bovie, Luc Van den Hove

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Proceedings Volume 2884, 16th Annual BACUS Symposium on Photomask Technology and Management; (1996) https://doi.org/10.1117/12.262811
Event: 16th Annual BACUS Symposium on Photomask Technology and Management, 1996, Redwood City, CA, United States

Abstract

The present paper reports on the achievement of a 3% linewidth control on experimental 4X reticles for 0.18 micrometers (0.72 micrometers on mask), for all linewidths from 0.15 micrometers (0.6 micrometers on mask) up to several microns at the same time, regardless of the local pattern density (e-beam proximity effect). Keeping in mind that a reduction of the projection demagnification factor of optical wafer steppers from 5X to 4X represents an additional generation of reticles (with 1 micrometers on mask level), it is clear that, compared to commercial mask making, this result consists of successful patterning of experimental reticles of 2 mask generations ahead, with tight linewidth control. A similar accuracy has become required for the fabrication of masks with optical proximity corrected (OPC) data, because this technique needs medium--to far submicron resolution on mask. Results of such experimental OPC masks are presented. The present work focuses on pattern-generation related topics. Inspection and repair are not covered, although even more aggressive improvements may be required there.

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Rik M. Jonckheere, Jozef Moonens, Goedele Potoms, Inga Bovie, and Luc Van den Hove "4X reticles with 3% linewidth control for the development of 0.18-um lithography", Proc. SPIE 2884, 16th Annual BACUS Symposium on Photomask Technology and Management, (27 December 1996); https://doi.org/10.1117/12.262811

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