Conducting poly(aniline-co-N-propanesulfonic acid aniline) (PAPSAH) as charge dissipation layer for e-beam lithography

Shyi-Long Shy; T. S. Chao; Tan Fu Lei; Shaw-An Chen; Wen-An Loong; Chun-Yen Chang

doi:10.1117/12.262831

27 December 1996 Conducting poly(aniline-co-N-propanesulfonic acid aniline) (PAPSAH) as charge dissipation layer for e-beam lithography

Shyi-Long Shy, T. S. Chao, Tan Fu Lei, Shaw-An Chen, Wen-An Loong, Chun-Yen Chang

Author Affiliations +

Proceedings Volume 2884, 16th Annual BACUS Symposium on Photomask Technology and Management; (1996) https://doi.org/10.1117/12.262831
Event: 16th Annual BACUS Symposium on Photomask Technology and Management, 1996, Redwood City, CA, United States

Abstract

In this paper, the deep submicron complementary metal-oxide- semiconductor (CMOS) devices were fabricated. A conducting poly(aniline-co-N-propanesulfonic acid aniline) (PAPSAH) as charge dissipation layer for e-beam lithography is used for direct writing the critical polysilicon gate level. Most of the specification of the designed CMOS parameters are met. The optimum conditions for submicron to 0.15 micrometers line/space of polysilicon gate using PAPSAH as charge dissipation layer for e-beam lithography are also established.

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Shyi-Long Shy, T. S. Chao, Tan Fu Lei, Shaw-An Chen, Wen-An Loong, and Chun-Yen Chang "Conducting poly(aniline-co-N-propanesulfonic acid aniline) (PAPSAH) as charge dissipation layer for e-beam lithography", Proc. SPIE 2884, 16th Annual BACUS Symposium on Photomask Technology and Management, (27 December 1996); https://doi.org/10.1117/12.262831

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