Evaluation of a new photomask CD metrology tool

Leonard F. Dubuque; Nicholas G. Doe; Patrick St. Cin

doi:10.1117/12.262804

27 December 1996 Evaluation of a new photomask CD metrology tool

Leonard F. Dubuque, Nicholas G. Doe, Patrick St. Cin

Proceedings Volume 2884, 16th Annual BACUS Symposium on Photomask Technology and Management; (1996) https://doi.org/10.1117/12.262804
Event: 16th Annual BACUS Symposium on Photomask Technology and Management, 1996, Redwood City, CA, United States

Abstract

In the integrated circuit (IC) photomask industry today, dense IC patterns, sub-micron critical dimensions (CD), and narrow tolerances for 64 M technologies and beyond are driving increased demands to minimize and characterize all components of photomask CD variation. This places strict requirements on photomask CD metrology in order to accurately characterize the mask CD error distribution. According to the gauge-maker's rule, measurement error must not exceed 30% of the tolerance on the product dimension measured or the gauge is not considered capable. The traditional single point repeatability tests are a poor measure of overall measurement system error in a dynamic, leading-edge technology environment. In such an environment, measurements may be taken at different points in the field- of-view due to stage in-accuracy, pattern recognition requirements, and throughput considerations. With this in mind, a set of experiments were designed to characterize thoroughly the metrology tool's repeatability and systematic error. Original experiments provided inconclusive results and had to be extended to obtain a full characterization of the system. Tests demonstrated a performance of better than 15 nm total CD error. Using this test as a tool for further development, the authors were able to determine the effects of various system components and measure the improvement with changes in optics, electronics, and software. Optimization of the optical path, electronics, and system software has yielded a new instrument with a total system error of better than 8 nm. Good collaboration between the photomask manufacturer and the equipment supplier has led to a realistic test of system performance and an improved CD measurement instrument.

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Leonard F. Dubuque, Nicholas G. Doe, and Patrick St. Cin "Evaluation of a new photomask CD metrology tool", Proc. SPIE 2884, 16th Annual BACUS Symposium on Photomask Technology and Management, (27 December 1996); https://doi.org/10.1117/12.262804

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KEYWORDS

Photomasks

Critical dimension metrology

Metrology

Tolerancing

Electronics

Environmental sensing

Optics manufacturing

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