Paper
27 December 1996 Mask fabrication rules for proximity-corrected patterns
Michael L. Rieger, John P. Stirniman
Author Affiliations +
Abstract
Optical proximity correction (OPC) adds complex convolutions to mask pattern shapes which can stress mask-making capabilities. Because the `decorations'--jogs, serifs, assist features--created by proximity correction are approximations to `ideal' corrected shapes there are many variations of corrected mask shapes that provide the same result on the wafer. With an understanding of specific mask- making limitations it is possible to leverage this leeway to create more `mask friendly' patterns with OPC.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael L. Rieger and John P. Stirniman "Mask fabrication rules for proximity-corrected patterns", Proc. SPIE 2884, 16th Annual BACUS Symposium on Photomask Technology and Management, (27 December 1996); https://doi.org/10.1117/12.262815
Lens.org Logo
CITATIONS
Cited by 4 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photomasks

Optical proximity correction

Semiconducting wafers

Inspection

Mask making

Image segmentation

Databases

RELATED CONTENT

OPC strategies to minimize mask cost and writing time
Proceedings of SPIE (March 11 2002)
Mask manufacturability improvement by MRC
Proceedings of SPIE (October 30 2007)
EUV mask blank defect avoidance solutions assessment
Proceedings of SPIE (November 08 2012)

Back to Top