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27 December 1996 Mask fabrication rules for proximity-corrected patterns
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Abstract
Optical proximity correction (OPC) adds complex convolutions to mask pattern shapes which can stress mask-making capabilities. Because the `decorations'--jogs, serifs, assist features--created by proximity correction are approximations to `ideal' corrected shapes there are many variations of corrected mask shapes that provide the same result on the wafer. With an understanding of specific mask- making limitations it is possible to leverage this leeway to create more `mask friendly' patterns with OPC.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael L. Rieger and John P. Stirniman "Mask fabrication rules for proximity-corrected patterns", Proc. SPIE 2884, 16th Annual BACUS Symposium on Photomask Technology and Management, (27 December 1996); https://doi.org/10.1117/12.262815
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